View ISL74422ARH_4867101.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers
ISL74422ARH
The Radiation Hardened ISL74422ARH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a CMOS level input signal into a high current output at voltages up to 18V. Its fast rise times and high current output allow very quick control of even the largest power MOSFETs in high frequency applications. The input of the ISL74422ARH can be directly driven by our HS-1825ARH and IS-1845ASRH PWM devices. The 9A high current output minimizes power losses in MOSFETs by rapidly charging and discharging high gate capacitances. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-01521. A link is provided on our website for downloading.
ISL74422ARH
Features
* QML Qualified per MIL-PRF-38535 Requirements * Electrically Screened to DSCC SMD # 5962-01521 * Radiation Environment - Total Dose (Max) . . . . . . . . . . . . . . 300krad(SI) - Latch-Up Immune * IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . 9A(Min) * TF (CL = 10,000pF) . . . . . . . 70ns(Typ); 90ns(Max) * TR (CL = 10,000pF) . . . . . 90ns(Typ); 105ns(Max) * Prop Delay High-Low (CL = 10,000pF) . . . . . . . . . . . . . . . . . . . . 75ns(Max), 55ns(Typ) * Prop Delay Low-High (CL = 10,000pF) . . . . . . . . . . . . . . . . . . . . 50ns(Max), 30ns(Typ) * Consistent Delay Times with VCC Changes * Wide Supply Voltage Range . . . . . . . . . 7V to 18V * Low Stand-by Power Consumption - Input Low . . . . . . . . . . . . . . . . . . <2mW(Max) - Inputs High. . . . . . . . . . . . . . . . <18mW(Max) * ESD Protected . . . . . . . . . . . . . . . . . . . .>1750V
Applications
* Switching Power Supplies * DC/DC Converters * Motor Controllers
Pin Configuration
ISL74422ARH-F (FLATPACK CDFP4-F16) TOP VIEW
NC NC LVS IN LGND NC NC GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VS VS NC OUT OUT NC NC GND
April 1, 2010 FN9031.2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2007, 2010. All Rights Reserved All other trademarks mentioned are the property of their respective owners
ISL74422ARH
Pin Descriptions
PIN(s) 1, 2, 6, 7, 10, 11, 14 3 4 5 8, 9 12, 13 15, 16 SYMBOL NC LVS IN LGND GND OUT VS NO Connect. Provides the supply voltage for the control logic. It is not internally connected to Pins 15 and 16 for noise immunity purposes, but may be connected externally. Input voltage to the driver. Control logic return. It is not internally connected to Pins 8 and 9 for noise immunity purposes, but may be connected externally. Pins must be connected to GND. Pins must be connected to output. Pins must be connected to VS. DESCRIPTION
Ordering Information
ORDERING NUMBER 5962F0152101VXC 5962F0152101QXC 5962F0152101V9A ISL74422ARHF/PROTO ISL74422ARHY/SAMPLE PART NUMBER (Note) ISL74422ARHVF ISL74422ARHQF ISL74422ARHVX ISL74422ARHF/PROTO ISL74422ARHY/SAMPLE ISL7 4422ARHF /PROTO PART MARKING Q5962F01 52101VXC Q5962F01 52101QXC TEMP. RANGE (C) -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 PACKAGE (RoHS COMPLIANT) 16 LD Flatpack 16 LD Flatpack DIE 16 LD Flatpack DIE SAMPLE
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations.
2
FN9031.2 April 1, 2010
ISL74422ARH
Die Characteristics
DIE DIMENSIONS: 3838m x 4829m (151.1 mils x 190.1mils) Thickness: 483m 25.4m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kA 1.0kA Top Metallization: Type: AlSiCu Thickness: 16.0kA 2kA Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 30
Metallization Mask Layout
ISL74422ARH
LGND
IN LVCC
PGND
PVCC
OUT2
OUT1
For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 3
FN9031.2 April 1, 2010

▲Up To Search▲

Price & Availability of ISL74422ARH

	To Download ISL74422ARH Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .